STMicroelectronics - 2N5401RUBT

  1. Home
  2. STMicroelectronics - 2N5401RUBT
2N5401RUBT by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number 2N5401RUBT
Description Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet 2N5401RUBT Datasheet
In Stock126
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
126 - -

Popular Products

Category Top Products

MMBT2907A by Infineon Technologies

MMBT2907A

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;
2N3906 by Diodes Incorporated

2N3906

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
BC847B by National Semiconductor

BC847B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3904 by SPC TECHNOLOGY/ MULTICOMP

2N3904

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn Off Time (toff): 250 ns;
2N2219A by Nte Electronics

2N2219A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2219A by SPC TECHNOLOGY/ MULTICOMP

2N2219A

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A;
MMBT2222ALT1G by Onsemi

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
MMBT3906 by Jiangsu Changjiang Electronics Technology

MMBT3906

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
JANTX2N2907AUATR by Microchip Technology

JANTX2N2907AUATR

Microchip Technology

Small Signal Bipolar Transistors; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
SBC846BLT1G by Onsemi

SBC846BLT1G

Onsemi

SBC846BLT1G by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 200, and fT of 100MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and max operating temp of 150°C.
MMBT2907A by Kodenshi Auk

MMBT2907A

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL;
2N2219A by Itt Semiconductor

2N2219A

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847B by Unisonic Technologies

BC847B

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
2N3906 by Central Semiconductor

2N3906

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3906 by Allegro MicroSystems

2N3906

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
SMBT2222AE6327HTSA1 by Infineon Technologies

SMBT2222AE6327HTSA1

Infineon Technologies

SMBT2222AE6327HTSA1 by Infineon is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers fast turn-on/off times of 35ns/285ns.
2N3906 by Zetex Plc

2N3906

Zetex Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2907AUB by Optek Technology

2N2907AUB

Optek Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
BC846B,235 by NXP Semiconductors

BC846B,235

NXP Semiconductors

BC846B,235 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and min hFE of 200. With a max operating temperature of 150°C, it can handle up to 0.1A collector current in a small outline package suitable for surface mount technology.
BC817-25 by Itt Semiconductor

BC817-25

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Terminal Form: GULL WING; Maximum Collector-Emitter Voltage: 45 V;