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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | 2N6029 |
| Description | PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 16 A; |
| Datasheet | 2N6029 Datasheet |
| In Stock | 154 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 1 MHz |
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | 16 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 200 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-MBFM-P2 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | PIN/PEG |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 200 W |
| JEDEC-95 Code: | TO-3 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 4 |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 100 V |
| Maximum Collector-Base Capacitance: | 1000 pF |
| Maximum VCEsat: | 2 V |
