STMicroelectronics - 2ST15300RSRHRT

  1. Home
  2. STMicroelectronics - 2ST15300RSRHRT
2ST15300RSRHRT by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number 2ST15300RSRHRT
Description Power Bipolar Transistors;
Datasheet 2ST15300RSRHRT Datasheet
In Stock3,042
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,042 - -

Popular Products

Category Top Products

JANTX2N3055 by Microchip Technology

JANTX2N3055

Microchip Technology

JANTX2N3055 by Microchip Tech is a NPN BJT transistor with max 70V VCE, 15A IC, and hFE of min 20. Ideal for switching applications in MIL-19500/407D standard, it has a metal package body and operates up to 200°C.
MJE340 by Asi Semiconductor

MJE340

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
NJVMJD31CT4G by Onsemi

NJVMJD31CT4G

Onsemi

NJVMJD31CT4G by Onsemi is a NPN BJT with 100V VCEO, 3A IC, and 15W Ptot. Ideal for automotive applications due to AEC-Q101 compliance and -65 to 150°C operating range. Suitable for surface mount designs with GULL WING terminals in a small outline package.
TIP31C by General Transistor

TIP31C

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP117 by Power Innovations

TIP117

Power Innovations

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; Terminal Position: SINGLE;
TIP125 by Weitron Technology

TIP125

Weitron Technology

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;
2N3055 by Hi-tron Semiconductor

2N3055

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BUV48A by Motorola

BUV48A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Turn Off Time (toff): 2400 ns;
TIP36C by Mospec Semiconductor

TIP36C

Mospec Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP125 by Samsung

TIP125

Samsung

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;
TIP29C by Fairchild Semiconductor

TIP29C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP42CG by Changzhou Galaxy Century Microelectronics

TIP42CG

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 6 A;
MJ15015G by Onsemi

MJ15015G

Onsemi

The Onsemi MJ15015G is a PNP BJT transistor with 180W power dissipation, 120V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a min hFE of 5 and operates up to 200°C. The package style is flange mount with a round shape and matte tin finish on the bottom terminal.
TIP32C by Onsemi

TIP32C

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
2N2905A by Vpt Components

2N2905A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 300 ns;
TIP47 by Nte Electronics

TIP47

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BD243C by Continental Device India

BD243C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP31CG by Onsemi

TIP31CG

Onsemi

TIP31CG by Onsemi is a NPN power BJT with 30W max power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. Its through-hole terminal form makes it suitable for various electronic designs.
TIP42C by Kec

TIP42C

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
NJVMJD112T4G by Onsemi

NJVMJD112T4G

Onsemi

NJVMJD112T4G by Onsemi is a NPN Darlington BJT with 100V VCEO, 2A IC, and 20W Ptot. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz. Suitable for power management in compact designs with small outline package style.