STMicroelectronics - 2STR1230G

  1. Home
  2. STMicroelectronics - 2STR1230G
2STR1230G by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number 2STR1230G
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 80;
Datasheet 2STR1230G Datasheet
In Stock152
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.5 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
152 - -

Popular Products

Category Top Products

MMBT3906 by Fairchild Semiconductor

MMBT3906

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
JANTX2N2907AUATR by Microchip Technology

JANTX2N2907AUATR

Microchip Technology

Small Signal Bipolar Transistors; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
BC817-40,215 by Nexperia

BC817-40,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; JEDEC-95 Code: TO-236AB;
2N3904-AP by Micro Commercial Components

2N3904-AP

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Time At Peak Reflow Temperature (s): 10;
BC547B by Microchip Technology

BC547B

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
MMBT5401LT1G by Onsemi

MMBT5401LT1G

Onsemi

MMBT5401LT1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 150V, max collector current of 0.5A, and min DC current gain of 50. With a package style of small outline and surface mount capability, it operates b/w -55 to 150 °C temperature range.
MMBT2907A by Electronic Devices

MMBT2907A

Electronic Devices

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY;
ULN2803AFWG(O,ELM) by Toshiba

ULN2803AFWG(O,ELM)

Toshiba

Toshiba's ULN2803AFWG(O,ELM) is an NPN BJT with 8 Darlington banks, built-in diode/resistor. Ideal for switching applications, it has a hFE of 1000 and can handle up to 50V/0.5A. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
MMBT2907ALT3G by Onsemi

MMBT2907ALT3G

Onsemi

MMBT2907ALT3G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package and can handle up to 0.6A of collector current. The device operates at temperatures up to 150°C and features a turn-on time of 45ns.
SBC817-40LT1G by Onsemi

SBC817-40LT1G

Onsemi

SBC817-40LT1G by Onsemi is a NPN BJT transistor with 250 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.
ULN2803AFWG(C,ELHA) by Toshiba

ULN2803AFWG(C,ELHA)

Toshiba

Toshiba's ULN2803AFWG(C,ELHA) is an NPN BJT with 8 elements and 18 terminals. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications in small outline packages with Gull Wing terminals.
BC847B,235 by NXP Semiconductors

BC847B,235

NXP Semiconductors

NXP Semiconductors' BC847B,235 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 200, it operates at max 150°C with IC of 0.1A. Its small outline package has GULL WING terminals and can handle up to 45V.
MMBT2907A by Weitronic Enterprise

MMBT2907A

Weitronic Enterprise

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N3904 by Nec Electronics America

2N3904

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
JANTX2N2222A by Optek Technology

JANTX2N2222A

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2907A by Secos

MMBT2907A

Secos

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
2N2905A by Swampscott Electronics

2N2905A

Swampscott Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT2222A by NXP Semiconductors

MMBT2222A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
ZTX651 by Diodes Incorporated

ZTX651

Diodes Incorporated

ZTX651 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 100, and max collector-emitter voltage of 60V. Ideal for applications requiring high frequency operation, such as RF amplifiers or oscillators due to its nominal transition frequency of 175MHz.
2N2222A by Shanghai Lunsure Electronic Technology

2N2222A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;