STMicroelectronics - 5204/002/04

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5204/002/04 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number 5204/002/04
Description Power Bipolar Transistors;
Datasheet 5204/002/04 Datasheet
In Stock2,932
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ULN2803AN by Texas Instruments is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and operates up to 150°C. The package style is in-line with through-hole terminals for easy installation.
BD138 by Micro Commercial Components

BD138

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PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; No. of Terminals: 3;
TIP122 by Samsung

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NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
BD138 by Crimson Semiconductor

BD138

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BCX5316TA by Diodes Incorporated

BCX5316TA

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TIP31C by General Transistor

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BCP53-16T3G by Onsemi

BCP53-16T3G

Onsemi

BCP53-16T3G by Onsemi is a PNP power BJT with 80V VCEO, 1.5A IC, and 100 hFE. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 50MHz. This small outline transistor has Gull Wing terminals in a rectangular package.
TIP122 by Changzhou Galaxy Century Microelectronics

TIP122

Changzhou Galaxy Century Microelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V; Terminal Position: SINGLE;
TIP117 by Inchange Semiconductor

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PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V;
BD138 by NXP Semiconductors

BD138

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP29C by Central Semiconductor

TIP29C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP42A by General Transistor

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TIP32C by Continental Device India

TIP32C

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP127 by Texas Instruments

TIP127

Texas Instruments

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TIP47 by Continental Device India

TIP47

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BD138 by Central Semiconductor

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PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 3; Terminal Position: SINGLE;
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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A; Terminal Position: SINGLE;
2N2219A by Vpt Components

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;