STMicroelectronics - 5204/002/07

  1. Home
  2. STMicroelectronics - 5204/002/07
5204/002/07 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number 5204/002/07
Description PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Package Style (Meter): CHIP CARRIER; No. of Elements: 1;
Datasheet 5204/002/07 Datasheet
In Stock3,503
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 40
Terminal Finish: GOLD
JESD-609 Code: e4
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Reference Standard: EUROPEAN SPACE AGENCY
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,503 - -

Popular Products

Category Top Products

TIP142T by Continental Device India

TIP142T

Continental Device India

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
TIP42A by Baneasa S A

TIP42A

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
TIP122 by Crimson Semiconductor

TIP122

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;
TIP42A by Nte Electronics

TIP42A

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP127 by Semiconductors

TIP127

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;
JANTX2N3055 by Microchip Technology

JANTX2N3055

Microchip Technology

JANTX2N3055 by Microchip Tech is a NPN BJT transistor with max 70V VCE, 15A IC, and hFE of min 20. Ideal for switching applications in MIL-19500/407D standard, it has a metal package body and operates up to 200°C.
2N2907A by Central Semiconductor

2N2907A

Central Semiconductor

Power Bipolar Transistors; Terminal Finish: TIN LEAD; JESD-609 Code: e0; Qualification: Not Qualified;
TIP112 by Onsemi

TIP112

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
MJD44H11T4G by Onsemi

MJD44H11T4G

Onsemi

MJD44H11T4G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150°C. Its small outline package makes it suitable for surface mount designs.
BD139 by Continental Device India

BD139

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP112 by Changzhou Galaxy Century Microelectronics

TIP112

Changzhou Galaxy Century Microelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;
MJD44H11RLG by Onsemi

MJD44H11RLG

Onsemi

MJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. The GULL WING package style makes it suitable for surface mount designs.
BD139 by Baneasa S A

BD139

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; JEDEC-95 Code: TO-126;
2SC5200N(S1,E,S) by Toshiba

2SC5200N(S1,E,S)

Toshiba

Toshiba's 2SC5200N(S1,E,S) is a NPN power BJT with max VCEsat of 3V, IC of 15A, and Pmax of 150W. Ideal for amplifier applications due to its single configuration and silicon element material.
TIP127G by Onsemi

TIP127G

Onsemi

TIP127G by Onsemi is a PNP Power BJT with 100V VCEO, 5A IC, and 65W Ptot. It features a Darlington configuration for amplifier applications. The transistor has a min hFE of 1000 and operates up to 150°C, making it suitable for high-power amplification needs.
JAN2N3055 by Solitron Devices

JAN2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP127 by Central Semiconductor

TIP127

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
MJD31CG by Onsemi

MJD31CG

Onsemi

MJD31CG by Onsemi is a NPN BJT transistor with 100V VCEO, 3A IC, and 15W Ptot. Ideal for amplifier applications, it operates b/w -65 to 150°C with hFE of at least 10. This Gull Wing package has a small outline style and can handle peak reflow at 260°C for up to 30s.
JANTX2N3055 by Solitron Devices

JANTX2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP31CG by Onsemi

TIP31CG

Onsemi

TIP31CG by Onsemi is a NPN power BJT with 30W max power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. Its through-hole terminal form makes it suitable for various electronic designs.