STMicroelectronics - 5961-01-414-3881

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5961-01-414-3881 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number 5961-01-414-3881
Description Power Bipolar Transistors; Moisture Sensitivity Level (MSL): 1;
Datasheet 5961-01-414-3881 Datasheet
In Stock4,007
NAME DESCRIPTION
Moisture Sensitivity Level (MSL): 1
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Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; No. of Terminals: 3;
ULN2804A by Allegro MicroSystems

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NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
JANTXV2N3055 by Api Technologies

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2SC5200N(S1,E,S) by Toshiba

2SC5200N(S1,E,S)

Toshiba

Toshiba's 2SC5200N(S1,E,S) is a NPN power BJT with max VCEsat of 3V, IC of 15A, and Pmax of 150W. Ideal for amplifier applications due to its single configuration and silicon element material.
2N2905A by Central Semiconductor

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PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Transistor Application: SWITCHING;
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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; JESD-609 Code: e0;
TIP3055 by NXP Semiconductors

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BD140 by Fairchild Semiconductor

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MC1413BDR2G by Onsemi

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MC1413BDR2G by Onsemi is a NPN BJT transistor with 1000 min hFE. It operates up to 150°C, handles 50V max collector-emitter voltage, and supports switching applications. The package is small outline with 16 terminals in gull wing form for surface mount assembly.
TIP31C by Semiconductors

TIP31C

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
2N3055 by Asi Semiconductor

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TIP42C by Changzhou Galaxy Century Microelectronics

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Package Style (Meter): FLANGE MOUNT;
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Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 17 A;
JANTX2N3055 by Api Technologies

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PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 18 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 120 V;
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TIP120 by Nte Electronics

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