5962D9666301QEX by STMicroelectronics | Interface ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	5962D9666301QEX
Description	LINE DRIVER; Temperature Grade: MILITARY; Terminal Form: THROUGH-HOLE; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR;
Datasheet	5962D9666301QEX Datasheet
In Stock	38

NAME	DESCRIPTION
Minimum Supply Voltage:	3 V
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Input Characteristics:	STANDARD
Nominal Supply Voltage:	3.3 V
Driver No. of Bits:	4
Maximum Supply Voltage:	3.6 V
Surface Mount:	NO
Differential Output:	YES
Minimum Operating Temperature:	-55 Cel
No. of Functions:	4
No. of Terminals:	16
Qualification:	Not Qualified
Maximum Transmit Delay:	42 ns
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-CDIP-T16
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	125 Cel
Package Code:	DIP
Interface Standard:	EIA-422
Interface IC Type:	LINE DRIVER
Temperature Grade:	MILITARY

Pricing (USD)

Qty.	Unit Price	Ext. Price
38	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;

BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.

Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.

RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.