STMicroelectronics - AM2931-125

2N3375 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 11.6 W, operates up to 200 °C, and supports frequencies up to 500 MHz. Ideal for ultra-high frequency circuits in metal packages.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;

STMicroelectronics' MSC81058 is a NPN RF BJT with 29W power dissipation, ideal for L Band applications. Featuring single configuration, it has 1A max collector current and 10pF collector-base capacitance. Suitable for amplifier circuits, this transistor operates up to 200 °C in a ceramic-metal package.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Terminals: 2; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17 W; Maximum Collector Current (IC): 1.25 A; Package Shape: RECTANGULAR;

2N3866A by Microchip Technology is an NPN RF BJT with a VCEsat of 1V, Gp of 10dB, and hFE of 25. It is used as an amplifier in the UHF band due to its high fT of 800MHz. The transistor has a max VCE of 30V and IC of 0.4A, making it suitable for high-frequency applications.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11.6 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;

STMicroelectronics' AM82731-025 is a NPN BJT transistor for switching applications. It offers a min power gain of 6.2 dB, max power dissipation of 100 W, and operates in the S Band frequency range. The transistor has a single configuration with a flange mount package suitable for high-power RF applications.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 10 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

STMicroelectronics' AM2931-110 is an NPN BJT transistor for switching applications. It offers a min power gain of 6.2 dB and can handle up to 375 W power dissipation. With a max collector current of 12 A, it is ideal for S Band frequency band applications.

SD1446 by STMicroelectronics is an NPN RF Power BJT with a max collector-emitter voltage of 18V and a max collector current of 12A. It is designed for ultra-high frequency band applications, featuring a plastic/epoxy package body material and radial terminal position. Ideal for amplifier circuits in the UHF band, this transistor has a single configuration with 4 terminals in a round flange mount package style.

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; JESD-30 Code: R-CDFP-F16;

STMicroelectronics AM81214-006 is an NPN RF BJT transistor with a max power dissipation of 16.7W and min hFE of 15, ideal for L Band switching applications. It has a max IC of 0.82A, operates up to 250 °C, and comes in a ceramic-metal package with dual terminals for flange mount connection.

BLV945B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at ultra-high frequencies, and offers a min power gain of 8.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;

SD1455 by STMicroelectronics is a NPN RF Power BJT with 140W power dissipation, suitable for amplifier applications in the VHF band. Featuring a max collector-emitter voltage of 35V and a max collector current of 8A, it operates at temperatures up to 175 °C.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.1 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY;