BDW93C by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	BDW93C
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB;
Datasheet	BDW93C Datasheet
In Stock	9,510

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	12 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	80 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	80 W
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	100 V
Maximum VCEsat:	3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
9,510	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;