BU808DFP by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	BU808DFP
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 8 A; Package Body Material: PLASTIC/EPOXY;
Datasheet	BU808DFP Datasheet
In Stock	375

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	8 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	60
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	42 W
Maximum Collector-Emitter Voltage:	700 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
375	-	-

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