STMicroelectronics - BU941T

  1. Home
  2. STMicroelectronics - BU941T
BU941T by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number BU941T
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG;
Datasheet BU941T Datasheet
In Stock2,868
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): 15 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Maximum Operating Temperature: 200 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 180 W
JEDEC-95 Code: TO-3
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 300
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 400 V
Maximum VCEsat: 2 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,868 - -

Popular Products

Category Top Products

TIP142 by Nte Electronics

TIP142

Nte Electronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;
TIP147 by Onsemi

TIP147

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A;
TIP36C by Mospec Semiconductor

TIP36C

Mospec Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP125 by Onsemi

TIP125

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Terminals: 3;
TIP47 by Power Innovations

TIP47

Power Innovations

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Terminal Form: THROUGH-HOLE;
TIP117 by Samsung

TIP117

Samsung

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
ULN2064B by STMicroelectronics

ULN2064B

STMicroelectronics

STMicroelectronics ULN2064B is a 4-bank NPN BJT with built-in diode and resistor, ideal for switching applications. Features include VCEsat of 1.4V, max IC of 1.75A, and VCE of 35V. Packaged in PLASTIC/EPOXY material with 16 terminals in RECTANGULAR shape for THROUGH-HOLE mounting.
TIP36C by Comset Semiconductors

TIP36C

Comset Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP41C by Changzhou Galaxy Century Microelectronics

TIP41C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; No. of Terminals: 3;
TIP41C by Samsung

TIP41C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BDW93C by Power Innovations

BDW93C

Power Innovations

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE; Case Connection: COLLECTOR;
TIP125 by Samsung

TIP125

Samsung

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;
TIP110 by Fairchild Semiconductor

TIP110

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;
BD679A by Crimson Semiconductor

BD679A

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE;
TIP50 by Tt Electronics Plc

TIP50

Tt Electronics Plc

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Terminal Form: THROUGH-HOLE; Minimum DC Current Gain (hFE): 30;
BDW93C by Mospec Semiconductor

BDW93C

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Minimum DC Current Gain (hFE): 100;
TIP115 by Continental Device India

TIP115

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
TIP122 by Inchange Semiconductor

TIP122

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
2N3055 by Electronic Transistors

2N3055

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD679 by Comset Semiconductors

BD679

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): .06 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;