STMicroelectronics - BULD116D

  1. Home
  2. STMicroelectronics - BULD116D
BULD116D by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number BULD116D
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
Datasheet BULD116D Datasheet
In Stock3,331
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 5 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-251AA
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 8
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 200 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,331 - -

Popular Products

Category Top Products

TIP125 by International Devices

TIP125

International Devices

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;
D44H11 by National Semiconductor

D44H11

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BD139-10 by Samsung

BD139-10

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; Minimum DC Current Gain (hFE): 63;
BD14016 by Fairchild Semiconductor

BD14016

Fairchild Semiconductor

Fairchild Semiconductor's BD14016 is a PNP BJT transistor with 80V VCE, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications due to its single configuration and hFE of 100, it comes in a plastic/epoxy package with through-hole terminals.
TIP115 by General Transistor

TIP115

General Transistor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
TIP31C by Texas Instruments

TIP31C

Texas Instruments

TIP31C by Texas Instruments is a NPN BJT transistor with 3A IC, 30W Pd, and 100V VCE. Ideal for switching applications due to its single configuration and high hFE of 10. Operates up to 150°C, featuring a rectangular package with through-hole terminals.
MJE350 by Continental Device India

MJE350

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
BD13910 by Fairchild Semiconductor

BD13910

Fairchild Semiconductor

BD13910 by Fairchild Semiconductor is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has hFE of 63 and fT of 250MHz. The package is through-hole with a flange mount style in plastic/epoxy material.
BD139-16 by Continental Device India

BD139-16

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
NJVMJD31CG by Onsemi

NJVMJD31CG

Onsemi

NJVMJD31CG by Onsemi is a Power BJT with SILICON element. It comes in a RECTANGULAR PLASTIC package with GULL WING terminals for SMT. AEC-Q101 certified, it's ideal for automotive applications due to its high-temperature tolerance up to 260°C and small outline design.
TIP127TU by Onsemi

TIP127TU

Onsemi

TIP127TU by Onsemi is a PNP power BJT with 100V VCEO, 5A IC, and 65W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating up to 150°C, this transistor has hFE of at least 1000 for efficient performance.
TIP36C by Microsemi

TIP36C

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Package Style (Meter): FLANGE MOUNT;
BD679A by Samsung

BD679A

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
BD1396STU by Onsemi

BD1396STU

Onsemi

BD1396STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
BD138 by Crimson Semiconductor

BD138

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2SC5200N(S1,E,S) by Toshiba

2SC5200N(S1,E,S)

Toshiba

Toshiba's 2SC5200N(S1,E,S) is a NPN power BJT with max VCEsat of 3V, IC of 15A, and Pmax of 150W. Ideal for amplifier applications due to its single configuration and silicon element material.
TIP115 by Motorola

TIP115

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
BD140 by Baneasa S A

BD140

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: SINGLE;
TIP115 by Central Semiconductor

TIP115

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP117 by Taitron Components

TIP117

Taitron Components

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB; Transistor Application: AMPLIFIER;