BZW06P9V4BRL by STMicroelectronics | Diodes

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	BZW06P9V4BRL
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet	BZW06P9V4BRL Datasheet
In Stock	2,085

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount:	NO
Maximum Reverse Current:	5 uA
No. of Terminals:	2
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Maximum Non Repetitive Peak Reverse Power Dissipation:	600 W
Technology:	AVALANCHE
JESD-30 Code:	O-PALF-W2
Minimum Breakdown Voltage:	10.5 V
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Maximum Breakdown Voltage:	12.1 V
Maximum Clamping Voltage:	20.3 V
Minimum Diode Capacitance:	1250 pF
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Breakdown Voltage:	11 V
Maximum Power Dissipation:	1.7 W
Reference Standard:	UL RECOGNIZED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,085	-	-

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

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TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;