STMicroelectronics - DB-915-12W

WIDE BAND MEDIUM POWER;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Package Equivalence Code: SOLCC6,.1,25;

AMMP-6220-TR2 by Broadcom is a wide band low power RF amplifier with 22 dB gain. It operates from 6 GHz to 20 GHz, with max input power of 15 dBm and characteristic impedance of 50 ohm. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.

Analog Devices' HMC478MP86 is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. Ideal for RF applications requiring surface mount components in the -40°C to +85°C temperature range.

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Screening Level: IEC-61249-2-21;

WIDE BAND LOW POWER;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

ERA-5SM+ by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, 50 ohm impedance, and 1.3 VSWR. It operates from 0 to 4000 MHz, handles up to 13 dBm input power, and has a compact surface mount package ideal for RF applications requiring amplification in the -45°C to 85°C temperature range.

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 79 mA; Package Equivalence Code: CAN4,.3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

NXP Semiconductors' BGU7007,115 is a RF & Microwave Amplifier with 6 terminals and operates b/w -40 to 85°C. It has a power supply of 1.8V, max current of 15.9mA, and surface mount feature. Ideal for applications requiring amplification in temperature-sensitive environments.

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;

WIDE BAND HIGH POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1500 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm; Gain: 19 dB;

ADL5542ACPZ-R7 by Analog Devices is a wideband medium power RF amplifier with 11.2 dB gain, operating from 50 MHz to 6 GHz. It can handle up to 10 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high-frequency amplification in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER;

Qorvo's SPF5043ZSR is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. This wide band low power device is ideal for applications requiring surface mount components in RF and microwave systems.