ESDALC14-1BF4 by STMicroelectronics | Diodes

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	ESDALC14-1BF4
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	ESDALC14-1BF4 Datasheet
In Stock	1,090

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Repetitive Peak Reverse Voltage:	12 V
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
Diode Element Material:	SILICON
No. of Terminals:	2
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
Maximum Non Repetitive Peak Reverse Power Dissipation:	100 W
Technology:	AVALANCHE
JESD-30 Code:	R-PBCC-N2
Minimum Breakdown Voltage:	13 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Reference Standard:	IEC-61000-4-2
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,090	$0.027	$29.430

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.