ESDX051-2BU3 by STMicroelectronics | Diodes

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	ESDX051-2BU3
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	ESDX051-2BU3 Datasheet
In Stock	3,541

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	COMMON ANODE, 3 ELEMENTS
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount:	YES
Maximum Reverse Current:	.1 uA
No. of Terminals:	3
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
Maximum Non Repetitive Peak Reverse Power Dissipation:	15 W
Technology:	AVALANCHE
JESD-30 Code:	R-PBCC-N3
Minimum Breakdown Voltage:	6 V
No. of Elements:	3
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Other Names:	497-ESDX051-2BU3TR 497-ESDX051-2BU3CT 497-ESDX051-2BU3DKR
Maximum Breakdown Voltage:	10 V
Reverse Test Voltage:	5 V
Maximum Repetitive Peak Reverse Voltage:	5 V
Maximum Clamping Voltage:	15 V
Minimum Operating Temperature:	-55 Cel
Diode Element Material:	SILICON
Nominal Breakdown Voltage:	6.8 V
Additional Features:	LOW CAPACITANCE
Reference Standard:	IEC-61000-4-2

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,541	$0.091	$322.231

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;

OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;