STMicroelectronics - ESM2012DF

  1. Home
  2. STMicroelectronics - ESM2012DF
ESM2012DF by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number ESM2012DF
Description Power Bipolar Transistors; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Maximum VCEsat: 2 V;
Datasheet ESM2012DF Datasheet
In Stock2,516
NAME DESCRIPTION
Maximum Collector Current (IC): 120 A
Maximum Power Dissipation (Abs): 175 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: BIP General Purpose Power
Maximum VCEsat: 2 V
Maximum Fall Time (tf): 300 ns
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,516 - -

Popular Products

Category Top Products

2N3055G by Onsemi

2N3055G

Onsemi

2N3055G by Onsemi is a NPN Power BJT with max. power dissipation of 115W, max. collector-emitter voltage of 60V, and max. collector current of 15A. It is used for switching applications due to its single configuration and high transition frequency of 2.5MHz in a round package shape with flange mount style.
TIP29C by Samsung

TIP29C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
MJD31CT4 by Onsemi

MJD31CT4

Onsemi

MJD31CT4 by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C. With a transition frequency of 3MHz, it is suitable for surface mount designs.
TIP36C by New Jersey Semiconductor Products

TIP36C

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; No. of Elements: 1; Transistor Element Material: SILICON;
TIP120 by Motorola

TIP120

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
TIP111 by Power Innovations

TIP111

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Qualification: Not Qualified;
TIP42C by Power Innovations

TIP42C

Power Innovations

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 100 V;
TIP41CG by Onsemi

TIP41CG

Onsemi

TIP41CG by Onsemi is a NPN power BJT with 65W max power dissipation, 100V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. Its package style is flange mount with through-hole terminals.
2N3904T&A by Continental Device India

2N3904T&A

Continental Device India

Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BD679A by Baneasa S A

BD679A

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Case Connection: ISOLATED; Terminal Form: THROUGH-HOLE;
TIP32C by Microsemi

TIP32C

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V; JESD-30 Code: R-PSFM-T2;
BD679A by Central Semiconductor

BD679A

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP42A by Bourns

TIP42A

Bourns

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 15;
ZTX951 by Diodes Incorporated

ZTX951

Diodes Incorporated

ZTX951 by Diodes Inc. is a PNP BJT transistor with max. 60V VCE, 4A IC, and 120MHz fT. Ideal for power applications requiring high DC current gain (hFE) of min. 10, it operates up to 200°C making it suitable for various industrial uses like power supplies and motor control systems.
MJE350 by Onsemi

MJE350

Onsemi

The Onsemi MJE350 is a PNP BJT transistor with max. collector-emitter voltage of 300V and max. power dissipation of 20W. Ideal for switching applications, it has a min. DC current gain of 30 and operates at up to 150°C. Package style: Flange mount, terminals: Through-hole, finish: Sn/Pb.
BD679 by Continental Device India

BD679

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP127 by Plessey Semiconductors Discrete Components Div

TIP127

Plessey Semiconductors Discrete Components Div

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; JEDEC-95 Code: TO-220AB;
MJD32CT4G by Onsemi

MJD32CT4G

Onsemi

The Onsemi MJD32CT4G is a PNP BJT transistor with 100V VCE, 3A IC, and 15W power dissipation. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. This surface-mount transistor in a small outline package is designed for high-performance amplification.
2N3055 by Microchip Technology

2N3055

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A;
MJE340 by SPC TECHNOLOGY/ MULTICOMP

MJE340

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3;