STMicroelectronics - ESM2012DV

  1. Home
  2. STMicroelectronics - ESM2012DV
ESM2012DV by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number ESM2012DV
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 120 A; Terminal Position: UPPER;
Datasheet ESM2012DV Datasheet
In Stock2,752
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 120 A
Configuration: DARLINGTON WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Power
Polarity or Channel Type: NPN
Surface Mount: NO
Terminal Finish: NICKEL
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 175 W
Maximum Collector-Emitter Voltage: 125 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum VCEsat: 2 V
Maximum Power Dissipation Ambient: 175 W
Maximum Fall Time (tf): 300 ns
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,752 $3.910 $10,760.320

Popular Products

Category Top Products

2N3055G by Onsemi

2N3055G

Onsemi

2N3055G by Onsemi is a NPN Power BJT with max. power dissipation of 115W, max. collector-emitter voltage of 60V, and max. collector current of 15A. It is used for switching applications due to its single configuration and high transition frequency of 2.5MHz in a round package shape with flange mount style.
TIP36C by Central Semiconductor

TIP36C

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP110 by Fairchild Semiconductor

TIP110

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;
TIP120 by Mospec Semiconductor

TIP120

Mospec Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V;
TIP31CG by Onsemi

TIP31CG

Onsemi

TIP31CG by Onsemi is a NPN power BJT with 30W max power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. Its through-hole terminal form makes it suitable for various electronic designs.
BD679A by Crimson Semiconductor

BD679A

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE;
BUV48A by New Jersey Semiconductor Products

BUV48A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 15 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 450 V; Transistor Element Material: SILICON;
TIP125 by Weitron Technology

TIP125

Weitron Technology

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;
TIP50 by Central Semiconductor

TIP50

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP42C by Baneasa S A

TIP42C

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Qualification: Not Qualified;
TIP36C by Nte Electronics

TIP36C

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 100 V;
TIP110 by Semiconductors

TIP110

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
TIP31C by SPC TECHNOLOGY/ MULTICOMP

TIP31C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BD679 by STMicroelectronics

BD679

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
BD138 by NXP Semiconductors

BD138

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MJD45H11G by Onsemi

MJD45H11G

Onsemi

The Onsemi MJD45H11G is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates b/w -55 to 150°C. The Gull Wing package style makes it suitable for surface mount designs.
TIP122S by Motorola

TIP122S

Motorola

TIP122S by Motorola is a NPN Darlington transistor with 100V max collector-emitter voltage, 5A max collector current, and 75W max power dissipation. Ideal for switching applications due to its high DC current gain of 1000 (hFE) and nominal transition frequency of 4MHz. Package style: Flange mount, terminal form: Through-hole, package material: Plastic/epoxy.
BD679A by Onsemi

BD679A

Onsemi

BD679A by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications, it features a built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a max collector current of 4A and transition frequency of 10MHz.
TIP122TU by Onsemi

TIP122TU

Onsemi

TIP122TU by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 65W in various electronic designs.
TIP120 by Rectron

TIP120

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-609 Code: e3; Package Style (Meter): FLANGE MOUNT;