STMicroelectronics - ESM2030DV

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ESM2030DV by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number ESM2030DV
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 67 A; Terminal Position: UPPER;
Datasheet ESM2030DV Datasheet
In Stock2,242
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 67 A
Configuration: DARLINGTON WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Power
Surface Mount: NO
Terminal Finish: NICKEL
No. of Terminals: 4
Maximum Power Dissipation (Abs): 150 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 150 W
Maximum Fall Time (tf): 600 ns
Other Names: ESM2030DV-ND
497-7232-5
Polarity or Channel Type: NPN
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 300 V
Maximum VCEsat: 2.2 V
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