STMicroelectronics - ESM3007

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;

MPS-A92 by General Electric Solid State is a PNP transistor with a single configuration. It has a max power dissipation of 0.625W and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low DC current gain and a max collector current of 0.5A.

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;

BCY89 by Texas Instruments is an NPN transistor with a max power dissipation of 0.15W and min DC current gain of 100. It operates at a max temperature of 175°C, with a max collector current of 0.03A and nominal transition frequency of 10MHz. This transistor is commonly used in applications requiring low power dissipation and high DC current gain, such as signal amplification in electronic circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): .03 W; Maximum Collector Current (IC): .001 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;

Vishay Intertechnology's MMBT3906 is a PNP transistor with a max collector current of 0.2A and min DC current gain of 30. With a max power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for applications requiring high frequency operation such as signal amplification in electronic circuits.

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; JESD-609 Code: e0;

The Texas Instruments BD140 is a PNP transistor with max power dissipation of 8W, hFE of 40, and IC of 1.5A. Ideal for applications requiring high current amplification such as audio amplifiers and power supplies due to its single configuration and high operating temperature of 150°C.

NXP Semiconductors' NX3008CBKS,115 is a N/P-channel transistor with 0.35A max drain current and 0.445W power dissipation. It operates in enhancement mode with 260°C peak reflow temp, suitable for various electronic applications.