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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | ESM3030DV |
| Description | NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 225 W; Maximum Collector Current (IC): 100 A; Maximum Power Dissipation Ambient: 225 W; |
| Datasheet | ESM3030DV Datasheet |
| In Stock | 1,381 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 100 A |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | BIP General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | NICKEL |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 225 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 225 W |
| Maximum Fall Time (tf): | 600 ns |
| Other Names: |
497-6691-5 ESM3030DV-ND |
| Polarity or Channel Type: | NPN |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 300 V |
| Maximum VCEsat: | 2.2 V |
