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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | ESM3030DV |
Description | NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 225 W; Maximum Collector Current (IC): 100 A; Maximum Power Dissipation Ambient: 225 W; |
Datasheet | ESM3030DV Datasheet |
In Stock | 1,381 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 100 A |
Configuration: | DARLINGTON WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Sub-Category: | BIP General Purpose Power |
Polarity or Channel Type: | NPN |
Surface Mount: | NO |
Terminal Finish: | NICKEL |
No. of Terminals: | 4 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 225 W |
Maximum Collector-Emitter Voltage: | 300 V |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum VCEsat: | 2.2 V |
Maximum Power Dissipation Ambient: | 225 W |
Maximum Fall Time (tf): | 600 ns |