
Image shown is a representation only.
Manufacturer | STMicroelectronics |
---|---|
Manufacturer's Part Number | ESM6045DV |
Description | NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 84 A; No. of Terminals: 4; |
Datasheet | ESM6045DV Datasheet |
In Stock | 531 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 84 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | DARLINGTON WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Maximum Rise Time (tr): | 5500 ns |
Transistor Application: | SWITCHING |
Sub-Category: | BIP General Purpose Power |
Surface Mount: | NO |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | 250 W |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Power Dissipation Ambient: | 250 W |
Maximum Fall Time (tf): | 500 ns |
Polarity or Channel Type: | NPN |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 450 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | 2 V |