IRF720CHIP by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	IRF720CHIP
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 400 V; Operating Mode: ENHANCEMENT MODE;
Datasheet	IRF720CHIP Datasheet
In Stock	1,185

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.3 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	400 V
Qualification:	Not Qualified
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	S-XUUC-N2
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Additional Features:	FAST SWITCHING
Maximum Drain Current (Abs) (ID):	3.3 A
Maximum Drain-Source On Resistance:	1.8 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,185	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

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RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

CONNECTOR ACCESSORY; Associated Backshell Military - Specifications: MIL-DTL-38999; Material: COPPER ALLOY; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: FEMALE; DIN Conformity: NO;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;