STMicroelectronics - IRFK4H150

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IRFK4H150 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number IRFK4H150
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 500 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 4; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 90 A;
Datasheet IRFK4H150 Datasheet
In Stock211
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 500 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 4
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 90 A
Maximum Drain Current (Abs) (ID): 90 A
Sub-Category: FET General Purpose Power
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