STMicroelectronics - IRFK6H450

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IRFK6H450 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number IRFK6H450
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Drain Current (Abs) (ID): 66 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 6; Maximum Operating Temperature: 150 Cel;
Datasheet IRFK6H450 Datasheet
In Stock1,185
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 625 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 6
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 66 A
Maximum Drain Current (Abs) (ID): 66 A
Sub-Category: FET General Purpose Power
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