STMicroelectronics - J2N2222AUB1

  1. Home
  2. STMicroelectronics - J2N2222AUB1
J2N2222AUB1 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number J2N2222AUB1
Description Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet J2N2222AUB1 Datasheet
In Stock3,486
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,486 - -

Popular Products

Category Top Products

BC846BPN,115 by Nexperia

BC846BPN,115

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT3906 by Microsemi

MMBT3906

Microsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
MMBT3906 by Vishay Semiconductors

MMBT3906

Vishay Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
BC847BLT1G by Onsemi

BC847BLT1G

Onsemi

BC847BLT1G by Onsemi is a NPN BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 200, and fT of 100MHz. With max ratings of 45V VCEO and 0.1A IC, it operates b/w -55 to 150°C.
2N2219A by Silicon Transistor

2N2219A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2905A by International Devices

2N2905A

International Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-40QAZ by NXP Semiconductors

BC817-40QAZ

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
2N2907A by Diotec Semiconductor Ag

2N2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; JESD-609 Code: e3;
2N2222A by New England Semiconductor

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2222A by Onsemi

MMBT2222A

Onsemi

The Onsemi MMBT2222A is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 1A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260°C, it operates b/w -55 to 150°C efficiently.
BCP56-16,115 by Nexperia

BCP56-16,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
BC547C by Central Semiconductor

BC547C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2N2222AUA by Optek Technology

2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547BBU by Onsemi

BC547BBU

Onsemi

BC547BBU by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 200, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 45V and max. collector current of 0.1A in a cylindrical package style with through-hole terminals.
MMBT2907A by Surge Components

MMBT2907A

Surge Components

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BC817-25W,115 by Nexperia

BC817-25W,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
BC846A,215 by NXP Semiconductors

BC846A,215

NXP Semiconductors

BC846A,215 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and a min DC current gain of 110 (hFE). With a max operating temperature of 150°C, it is suitable for small outline surface mount packages.
JANTX2N2907AUATR by Microchip Technology

JANTX2N2907AUATR

Microchip Technology

Small Signal Bipolar Transistors; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
2N6517BU by Onsemi

2N6517BU

Onsemi

2N6517BU by Onsemi is a NPN BJT with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used in applications requiring small signal amplification due to its high transition frequency of 40MHz and max. power dissipation of 0.625W in a cylindrical package style.
2N2907A by NXP Semiconductors

2N2907A

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: METAL;