STMicroelectronics - J2ST3360K1

J2ST3360K1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number J2ST3360K1
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .8 A; Maximum VCEsat: .38 V;
Datasheet J2ST3360K1 Datasheet
In Stock553
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .8 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Maximum Turn On Time (ton): 175 ns
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 7 W
Terminal Position: DUAL
Package Style (Meter): FLATPACK
Maximum Turn Off Time (toff): 2500 ns
JESD-30 Code: R-CDFP-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 200 Cel
Maximum Power Dissipation Ambient: 1.4 W
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 160
Minimum Operating Temperature: -65 Cel
Maximum Collector-Emitter Voltage: 60 V
Additional Features: HIGH RELIABILITY
Maximum Collector-Base Capacitance: 45 pF
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: .38 V
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