STMicroelectronics - JANS2N2222AUBA

  1. Home
  2. STMicroelectronics - JANS2N2222AUBA
JANS2N2222AUBA by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number JANS2N2222AUBA
Description Small Signal Bipolar Transistors;
Datasheet JANS2N2222AUBA Datasheet
In Stock2,919
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,919 - -

Popular Products

Category Top Products

BC847C-13-F by Diodes Incorporated

BC847C-13-F

Diodes Incorporated

Diodes Inc. BC847C-13-F is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 420, and fT of 300MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and max. collector-emitter voltage of 45V.
2N2219A by New Jersey Semiconductor Products

2N2219A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
JANTX2N2222A by M/a-com Technology Solutions

JANTX2N2222A

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE; Maximum Turn Off Time (toff): 300 ns;
2N3906 by Vishay Semiconductors

2N3906

Vishay Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
BC817-25 by Siemens

BC817-25

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N2222A by Swampscott Electronics

2N2222A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847-C by Kec

BC847-C

Kec

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
JANTX2N2222AUB by M/a-com Technology Solutions

JANTX2N2222AUB

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Reference Standard: MIL-19500;
BC847C by STMicroelectronics

BC847C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC847B by Changzhou Galaxy Century Microelectronics

BC847B

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
2N2907A by Semicoa

2N2907A

Semicoa

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Diodes Incorporated

BC817-25

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N2222AUA by Tt Electronics Plc

2N2222AUA

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Maximum Turn Off Time (toff): 300 ns; Transistor Element Material: SILICON;
2N3904TFR by Fairchild Semiconductor

2N3904TFR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40LT1G by Onsemi

BC817-40LT1G

Onsemi

BC817-40LT1G by Onsemi is a NPN BJT with 45V VCEO, 0.5A IC, and 100MHz fT. Ideal for small signal applications in electronics due to its high hFE of 250 and compact SOT-23 package. Operating temperature range from -55°C to 150°C makes it suitable for various environments.
BC847C by ROHM

BC847C

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC847B by Forward International Electronics

BC847B

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
BC858B,215 by NXP Semiconductors

BC858B,215

NXP Semiconductors

BC858B,215 by NXP Semiconductors is a PNP BJT for switching applications. With VCEsat of 0.65V and hFE of 220, it operates at max 150°C with IC of 0.1A. Its small outline package makes it suitable for surface mount designs.
BC847B by Vishay Semiconductors

BC847B

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
2N2222AUA by Microchip Technology

2N2222AUA

Microchip Technology

2N2222AUA by Microchip is a NPN transistor with max. collector-emitter voltage of 50V and max. collector current of 0.8A. It has a min. DC current gain of 30, ideal for switching applications with a max. power dissipation of 0.65W in surface mount package style suitable for small outline designs.