M28W160T150N1 by STMicroelectronics | Memory ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	M28W160T150N1
Description	FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Power Supplies (V): 1.65/2.2,3;
Datasheet	M28W160T150N1 Datasheet
In Stock	993

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.000005 Amp
Organization:	1MX16
Sub-Category:	Flash Memories
Surface Mount:	YES
Maximum Supply Current:	20 mA
Command User Interface:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	48
No. of Words:	1048576 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Technology:	CMOS
JESD-30 Code:	R-PDSO-G48
No. of Sectors/Size:	8,31
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	70 Cel
Package Code:	TSSOP
Boot Block:	TOP
Memory Density:	16777216 bit
Sector Size (Words):	4K,32K
Toggle Bit:	NO
Memory IC Type:	FLASH
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	16
Type:	NOR TYPE
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP48,.8,20
Common Flash Interface:	YES
Maximum Access Time:	150 ns
No. of Words Code:	1M
Parallel or Serial:	PARALLEL
Terminal Pitch:	.5 mm
Temperature Grade:	COMMERCIAL
Data Polling:	NO
Power Supplies (V):	1.65/2.2,3

Pricing (USD)

Qty.	Unit Price	Ext. Price
993	-	-

LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;