M48Z02-70PC1 by STMicroelectronics | Memory ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	M48Z02-70PC1
Description	STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
Datasheet	M48Z02-70PC1 Datasheet
In Stock	46

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.003 Amp
Organization:	2KX8
Output Characteristics:	3-STATE
Maximum Seated Height:	9.65 mm
Minimum Supply Voltage (Vsup):	4.75 V
Sub-Category:	SRAMs
Surface Mount:	NO
Maximum Supply Current:	80 mA
Terminal Finish:	MATTE TIN
No. of Terminals:	24
No. of Words:	2048 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-PDIP-T24
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	DIP
Width:	15.24 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	16384 bit
Minimum Standby Voltage:	4.75 V
Memory IC Type:	STANDARD SRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	0 Cel
Memory Width:	8
Output Enable:	YES
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	DIP24,.6
Length:	34.545 mm
No. of Words Code:	2K
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	PARALLEL
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	5.5 V
Power Supplies (V):	5

Pricing (USD)

Qty.	Unit Price	Ext. Price
46	-	-

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;