STMicroelectronics - M65KG256AB8W8

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M65KG256AB8W8 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number M65KG256AB8W8
Description DDR1 DRAM; Temperature Grade: OTHER; Package Code: DIE; Refresh Cycles: 8192; Package Shape: UNSPECIFIED; Additional Features: AUTO/SELF REFRESH;
Datasheet M65KG256AB8W8 Datasheet
In Stock1,758
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Standby Current: .00001 Amp
Organization: 16MX16
Output Characteristics: 3-STATE
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.7 V
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 130 mA
Maximum Clock Frequency (fCLK): 133 MHz
No. of Words: 16777216 words
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
Technology: CMOS
JESD-30 Code: X-XUUC-N
Package Shape: UNSPECIFIED
Terminal Form: NO LEAD
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: DIE
Input/Output Type: COMMON
No. of Ports: 1
Memory Density: 268435456 bit
Self Refresh: YES
Sequential Burst Length: 2,4,8,16
Memory IC Type: DDR1 DRAM
Minimum Operating Temperature: -30 Cel
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Package Equivalence Code: WAFER
Refresh Cycles: 8192
Interleaved Burst Length: 2,4,8,16
Maximum Access Time: 6 ns
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 1.8
Additional Features: AUTO/SELF REFRESH
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 1.9 V
Power Supplies (V): 1.8
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Pricing (USD)

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