MJ10004 by STMicroelectronics | Transistors

Image shown is a representation only.

Manufacturer	STMicroelectronics
Manufacturer's Part Number	MJ10004
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 20 A;
Datasheet	MJ10004 Datasheet
In Stock	665

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	10 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	20 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	800 ns
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	2
Maximum Power Dissipation (Abs):	175 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	2000 ns
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	200 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	175 W
JEDEC-95 Code:	TO-3
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	450 V
Additional Features:	MULTIEPITAXIAL PLANAR
Maximum VCEsat:	3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
665	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;

MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;