MJ11011 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	MJ11011
Description	PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 60 V;
Datasheet	MJ11011 Datasheet
In Stock	2,555

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Collector Current (IC):	30 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	2
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	200 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	200 W
JEDEC-95 Code:	TO-3
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	200
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V
Maximum VCEsat:	4 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,555	-	-

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