STMicroelectronics - MSC80185

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 14;

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;

Onsemi's 2SC5226A-4-TL-E is an NPN RF BJT with a max fT of 7000 MHz. It has a max Vce of 10V and Ic of 0.07A, suitable for ultra-high frequency applications. This transistor comes in a small outline package ideal for surface mount designs.

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;

The Onsemi MMBTH81LT3 is a PNP RF BJT with 600 MHz fT, 20V VCEO, and 0.85pF CCB. Ideal for UHF applications, it features a Gull Wing terminal form in a small outline package. Suitable for high-frequency designs requiring compact size and low capacitance.

Onsemi's 2SC5227A-4-TB-E is an NPN RF BJT with a max power dissipation of 0.2W and fT of 7000MHz. Ideal for small outline packages, it operates up to 150 °C, with IC at 0.07A making it suitable for high-frequency applications like RF amplifiers.

MMBTH10RG by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and a transition frequency of 450MHz. It is ideal for amplifier applications in the ultra-high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly. With a DC current gain of at least 50 and a max power dissipation of 0.225W, this transistor operates efficiently at temperatures up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;

BF959RLRM by Onsemi is a NPN RF BJT with 700MHz fT. Operating at 150 °C, it has VCE of 20V and IC of 0.1A. Ideal for very high frequency applications due to its single configuration and cylindrical package style.

BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.

BFP650H6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, max IC of 0.15 A, and max VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its silicon germanium carbon element material.

The NXP Semiconductors BFR520T is a RF Small Signal BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the L Band frequency range up to 9000 MHz, with a max power dissipation of 0.3W and a min DC current gain of 60.

SS9018D by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 28, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.

MPSH24 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and fT of 400MHz. Ideal for amplifier applications, it has a max power dissipation of 0.625W and operates in the very high frequency band.

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

MPSH11RL by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp. tolerance (150 °C). The transistor, in a cylindrical package, has 3 terminals and silicon element material for optimal performance.

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH;

SD1420 by STMicroelectronics is an NPN BJT transistor with a max power dissipation of 8.75W, suitable for amplifier applications in the ultra-high frequency band. It has a min DC current gain of 20 (hFE), operates at temperatures up to 200 °C, and features a max collector-emitter voltage of 28V.

RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;