STMicroelectronics - NAND01GW3A2BE06

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NAND01GW3A2BE06 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number NAND01GW3A2BE06
Description FLASH; Temperature Grade: INDUSTRIAL; Package Code: DIE; Package Shape: UNSPECIFIED; Toggle Bit: NO; Nominal Supply Voltage / Vsup (V): 3;
Datasheet NAND01GW3A2BE06 Datasheet
In Stock5,397
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Standby Current: .0001 Amp
Organization: 128MX8
Programming Voltage (V): 3
Minimum Supply Voltage (Vsup): 2.7 V
Sub-Category: Flash Memories
Surface Mount: YES
Maximum Supply Current: 20 mA
Command User Interface: YES
No. of Words: 134217728 words
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
Technology: CMOS
JESD-30 Code: X-XUUC-N
No. of Sectors/Size: 8K
Package Shape: UNSPECIFIED
Terminal Form: NO LEAD
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: DIE
Memory Density: 1073741824 bit
Sector Size (Words): 16K
Toggle Bit: NO
Memory IC Type: FLASH
Minimum Operating Temperature: -40 Cel
Memory Width: 8
Page Size (words): 512
No. of Functions: 1
Type: SLC NAND TYPE
Qualification: Not Qualified
Package Equivalence Code: DIE OR CHIP
Maximum Access Time: 15000 ns
No. of Words Code: 128M
Nominal Supply Voltage / Vsup (V): 3
Ready or Busy: YES
Parallel or Serial: PARALLEL
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 3.6 V
Data Polling: NO
Power Supplies (V): 3/3.3
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