STMicroelectronics - NAND512R3M0AZBF

NAND512R3M0AZBF by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number NAND512R3M0AZBF
Description MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 107; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 64M;
Datasheet NAND512R3M0AZBF Datasheet
In Stock2,965
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 64MX8
Maximum Time At Peak Reflow Temperature (s): 40
Maximum Seated Height: 1.2 mm
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
No. of Terminals: 107
No. of Words: 67108864 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B107
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: TFBGA
Width: 10.5 mm
Memory Density: 536870912 bit
Memory IC Type: MEMORY CIRCUIT
Minimum Operating Temperature: -30 Cel
Memory Width: 8
No. of Functions: 1
Qualification: Not Qualified
Length: 13 mm
No. of Words Code: 64M
Nominal Supply Voltage / Vsup (V): 1.8
Peak Reflow Temperature (C): 260
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 1.95 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,965 - -

Popular Products

Category Top Products