STMicroelectronics - PD20010STR-E

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PD20010STR-E by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number PD20010STR-E
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 5 A;
Datasheet PD20010STR-E Datasheet
In Stock4,551
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 5 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 59 W
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-PDFP-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 165 Cel
Case Connection: SOURCE
Other Names: -497-10095-2
PD20010STRE
-497-10095-1
497-10095-1
497-10095-2
497-10095-6
PD20010STR-E-ND
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Additional Features: ESD PROTECTION, HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 5 A
Peak Reflow Temperature (C): NOT SPECIFIED
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