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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | PD57002S |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.75 W; JESD-30 Code: R-PDSO-F2; Minimum Power Gain (Gp): 15 dB; |
| Datasheet | PD57002S Datasheet |
| In Stock | 87 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .25 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 4.75 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 165 Cel |
| Case Connection: | SOURCE |
| Minimum Power Gain (Gp): | 15 dB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 65 V |
| Qualification: | Not Qualified |
| Additional Features: | HIGH RELIABILITY |
| Maximum Drain Current (Abs) (ID): | .25 A |









