STMicroelectronics - PD85050S

  1. Home
  2. STMicroelectronics - PD85050S
PD85050S by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number PD85050S
Description RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet PD85050S Datasheet
In Stock2,172
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,172 - -

Popular Products

Category Top Products

934061296112 by NXP Semiconductors

934061296112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
D1008UK by Tt Electronics Plc

D1008UK

Tt Electronics Plc

D1008UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max temp of 200°C and comes in a RECTANGULAR package with FLANGE MOUNT style.
PTVA101K02EV-V1-R0 by Wolfspeed

PTVA101K02EV-V1-R0

Wolfspeed

PTVA101K02EV-V1-R0 by Wolfspeed is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It is a COMMON SOURCE amplifier suitable for ENHANCEMENT MODE operation in applications requiring high power amplification in the L Band.
CGHV37400F by Wolfspeed

CGHV37400F

Wolfspeed

RF Power Field-Effect Transistors;
PD84008L-E by STMicroelectronics

PD84008L-E

STMicroelectronics

PD84008L-E by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates at up to 150 °C. This surface-mount transistor ensures efficient performance in compact designs.
934065224112 by NXP Semiconductors

934065224112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;
SD57060-01 by STMicroelectronics

SD57060-01

STMicroelectronics

SD57060-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 200 °C.
AFT09MS007NT1 by NXP Semiconductors

AFT09MS007NT1

NXP Semiconductors

AFT09MS007NT1 by NXP Semiconductors is an N-CHANNEL RF Power FET with a max power dissipation of 182W. It operates at up to 150°C, making it suitable for high-temperature applications. With surface mount capability and a single configuration, it's ideal for various RF power amplification needs.
MW6S010GNR1 by NXP Semiconductors

MW6S010GNR1

NXP Semiconductors

NXP Semiconductors' MW6S010GNR1 is a RF Power FET with 68V DS Breakdown Voltage, suitable for L Band applications. It operates in Enhancement Mode, has 61.4W Max Power Dissipation, and features N-Channel configuration for amplifier circuits.
AFT09H310-04GSR6 by NXP Semiconductors

AFT09H310-04GSR6

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; No. of Elements: 1;
MRF101AN by NXP Semiconductors

MRF101AN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF175 by Asi Semiconductor

BLF175

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Drain Current (ID): 4 A;
CGH40006P by Wolfspeed

CGH40006P

Wolfspeed

CGH40006P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can handle up to 0.75A Drain Current.
STAC2942F by STMicroelectronics

STAC2942F

STMicroelectronics

STAC2942F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and operates in the very high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
LET9060F by STMicroelectronics

LET9060F

STMicroelectronics

LET9060F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 130 W.
PD84006L-E by STMicroelectronics

PD84006L-E

STMicroelectronics

STMicroelectronics PD84006L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a SINGLE configuration, 5A Drain Current, and 31W Power Dissipation in a PLASTIC/EPOXY package with NO LEAD terminals.
934065223112 by NXP Semiconductors

934065223112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; No. of Elements: 2;
BLF888D by NXP Semiconductors

BLF888D

NXP Semiconductors

RF Power Field-Effect Transistors;
934056583112 by NXP Semiconductors

934056583112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER; Terminal Position: DUAL;
MRF300BN by NXP Semiconductors

MRF300BN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;