STMicroelectronics - RF2L36040CF2

  1. Home
  2. STMicroelectronics - RF2L36040CF2
RF2L36040CF2 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number RF2L36040CF2
Description RF Power Field-Effect Transistors;
Datasheet RF2L36040CF2 Datasheet
In Stock76
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
76 - -

Popular Products

Category Top Products

934065606112 by NXP Semiconductors

934065606112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Terminal Form: FLAT;
MRF6VP121KHR5 by Freescale Semiconductor

MRF6VP121KHR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
CLF1G0035S-100 by Ampleon Netherlands B V

CLF1G0035S-100

Ampleon Netherlands B V

RF Power Field-Effect Transistors;
FLU35XM by Fujitsu Semiconductor America

FLU35XM

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 15 V; Terminal Position: QUAD;
934064627112 by NXP Semiconductors

934064627112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
A3T21H450W23SR6 by NXP Semiconductors

A3T21H450W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Power Gain (Gp): 14.2 dB; Minimum Operating Temperature: -40 Cel;
MRF136 by Asi Semiconductor

MRF136

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
CGH40120F by Wolfspeed

CGH40120F

Wolfspeed

CGH40120F by Wolfspeed is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, ideal for AMPLIFIER applications. Featuring GALLIUM NITRIDE technology, it has a max temp of 150°C and can operate from -40 to 150°C.
A3T09S100NR1 by NXP Semiconductors

A3T09S100NR1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
934055708112 by NXP Semiconductors

934055708112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR; JESD-30 Code: R-CDSO-G2;
A2T21S160-12SR3 by NXP Semiconductors

A2T21S160-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD55015S by STMicroelectronics

PD55015S

STMicroelectronics

PD55015S by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 5A and a max power dissipation of 73W.
RF3L05250CB4 by STMicroelectronics

RF3L05250CB4

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF8P29300HR6 by Freescale Semiconductor

MRF8P29300HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PTVA101K02EVV1 by Wolfspeed

PTVA101K02EVV1

Wolfspeed

RF Power Field-Effect Transistors;
DE375-501N21A by IXYS Corporation

DE375-501N21A

IXYS Corporation

DE375-501N21A by IXYS Corp is a plastic/epoxy N-channel RF Power FET with 500V DS breakdown voltage. It operates in the very high-frequency band and has a max drain current of 25A. Ideal for switching applications.
STAP57045 by STMicroelectronics

STAP57045

STMicroelectronics

STAP57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
LET20030C by STMicroelectronics

LET20030C

STMicroelectronics

LET20030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the L band. This surface-mount transistor supports high efficiency with a max temp of 200 °C.
PD84002 by STMicroelectronics

PD84002

STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.
BLF888DU by Ampleon Netherlands B V

BLF888DU

Ampleon Netherlands B V

BLF888DU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 104V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. This CERAMIC, METAL-SEALED COFIRED transistor has a RECTANGULAR package style and is suitable for surface mount with FLAT terminals.