STMicroelectronics - SC23ZD12

Other Memory ICs;

TMS2400JC by Texas Instruments is a MOS technology memory IC with 28 terminals in an IN-LINE package. It operates b/w -25°C to 85°C, making it suitable for various applications requiring reliable memory storage in harsh environments. The CERAMIC package ensures durability and stability, ideal for industrial and automotive electronics.

M36P0R9070E0ZAQE by STMicroelectronics is a CMOS memory IC with a 32M x 16 organization, operating at 1.8V. It features a thin profile grid array package and operates asynchronously within -30 °C to 85 °C. Ideal for compact electronic applications requiring efficient data storage.

Other Memory ICs;

Other Memory ICs;

SM4461-15JDS by Texas Instruments is a 64KX4 VIDEO DRAM IC with 262144 bit memory density. It operates at 5V, has 24 terminals in an IN-LINE package style, and offers a max access time of 150 ns. Ideal for applications requiring high-speed video data processing in temperature ranges from -55 to 110°C.

47L16T-I/ST by Microchip Technology is a small outline memory IC with 2Kx8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is ideal for industrial applications requiring a memory density of 16384 bit, fast access time of 400 ns, and operating temperature range from -40 to 85°C.

Other Memory ICs;

DC1920-F3 by Analog Devices is a CMOS MEMORY CIRCUIT with METAL body, ROUND shape, and DISK BUTTON style. It operates b/w -55 °C to 100°C, has 2 terminals with TIN LEAD finish. Ideal for applications requiring Other Function Memory ICs in surface mount configurations.

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Shape: SQUARE; Memory Density: 8388608 bit; Technology: CMOS;

M36W108T120ZN1 from STMicroelectronics is a versatile memory IC featuring 1M x 8 organization, operating at 3/3.3V with a max access time of 120 ns. Its thin profile and asynchronous mode make it ideal for compact applications. This CMOS device supports both FLASH and SRAM technologies.

The Texas Instruments SNC54AS870FH is a MIL-STD-883 Class B (Modified) rated TTL memory IC in a ceramic chip carrier package. With 28 terminals and operating temperatures ranging from -55°C to 125°C, it's ideal for military-grade applications requiring high reliability and performance. This surface-mount IC features a square package shape with no lead terminals, making it suitable for rugged environments.

M36W0R5020T0ZAQF by STMicroelectronics is a versatile memory IC featuring 2M words of FLASH+SRAM with a max access time of 70 ns. It operates asynchronously at a nominal voltage of 1.8V, suitable for industrial applications. Its compact design (8x10 mm) ensures efficient space utilization in devices.

MEMORY CIRCUIT;

MEMORY CIRCUIT;

MEMORY CIRCUIT; Package Shape: UNSPECIFIED; No. of Functions: 1; Terminal Finish: Matte Tin (Sn) - annealed; Technology: CMOS; Qualification: Not Qualified;

SN74ALS870DWP3 by Texas Instruments is a 24-terminal TTL memory IC in a small outline package. Operating temperature range of 0-70°C, suitable for commercial applications. Features gull wing terminals and is surface mountable, ideal for various electronic devices.

TMS2708-45JDL by Texas Instruments is a 1KX8 MOS memory IC with 8192-bit density. It features 3-STATE output, operates b/w 0 to 70°C, and has a max access time of 450 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.

M36LLR8860B1ZAQ by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates b/w -25 °C and 85 °C, making it ideal for compact electronic applications. With an 88-terminal grid array design, it ensures efficient space utilization in devices.

TMS4103JC by Texas Instruments is a MOS memory circuit IC with 28 terminals in an IN-LINE rectangular ceramic package. It operates b/w -25°C to 85°C, making it suitable for various applications requiring reliable memory storage and retrieval. The terminal pitch of 2.54mm and through-hole design enhance its versatility in electronic devices.