STMicroelectronics - SD1728F

  1. Home
  2. STMicroelectronics - SD1728F
SD1728F by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number SD1728F
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 55 V; Package Body Material: PLASTIC/EPOXY;
Datasheet SD1728F Datasheet
In Stock4,069
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 55 V
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-PRFM-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Maximum Collector-Base Capacitance: 360 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,069 - -

Popular Products

Category Top Products

BDP954-E6433 by Infineon Technologies

BDP954-E6433

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;
AM82731-003 by STMicroelectronics

AM82731-003

STMicroelectronics

STMicroelectronics' AM82731-003 is an NPN RF BJT transistor with a single configuration for switching applications. It offers a min power gain of 5.7 dB, can handle up to 23 W power dissipation, and operates in the S band frequency range. The transistor has a max collector current of 0.9 A and can withstand temperatures up to 250 °C, making it suitable for high-power RF applications.
PH1214-55EL by Tyco Electronics M/a-com

PH1214-55EL

Tyco Electronics M/a-com

NPN; Configuration: SINGLE; Surface Mount: YES; Additional Features: WITH EMITTER BALLASTING RESISTORS; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;
RZ1214B65Y by NXP Semiconductors

RZ1214B65Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 6 A; Highest Frequency Band: L BAND;
BLS3135-20,114 by NXP Semiconductors

BLS3135-20,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Transistor Application: AMPLIFIER; Qualification: Not Qualified;
SD4100 by STMicroelectronics

SD4100

STMicroelectronics

SD4100 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 220 W and operating temp up to 200 °C. It supports ultra-high frequency bands with a collector current of 16 A. Its ceramic, metal-sealed package ensures durability in demanding environments.
ISL73127RHF/PROTO by Renesas Electronics

ISL73127RHF/PROTO

Renesas Electronics

RF Power Bipolar Transistors; Terminal Finish: GOLD; JESD-609 Code: e4;
PVB42004X by NXP Semiconductors

PVB42004X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;
RZB12250Y by NXP Semiconductors

RZB12250Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 7 dB; Qualification: Not Qualified; Terminal Position: DUAL;
SD1459 by STMicroelectronics

SD1459

STMicroelectronics

SD1459 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, capable of handling up to 150W power dissipation. It operates in the VHF band and has a max collector-emitter voltage of 30V. Ideal for amplifier applications due to its high current capacity and very high frequency band support.
SD1285 by STMicroelectronics

SD1285

STMicroelectronics

SD1285 by STMicroelectronics is a NPN RF Power BJT with 80W power dissipation, 18V max collector-emitter voltage, and 4.5A max collector current. It is used in applications requiring high-power amplification in radio frequency circuits.
PTB20181 by Infineon Technologies

PTB20181

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.1 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY;
SD1275 by STMicroelectronics

SD1275

STMicroelectronics

SD1275 by STMicroelectronics is a NPN RF BJT with 70W power dissipation, 16V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications in the VHF band, it has a hFE of 20 and operates up to 200 °C. The package is post/stud mount style with gold terminal finish.
BLW96 by NXP Semiconductors

BLW96

NXP Semiconductors

The NXP Semiconductors BLW96 is a single NPN RF Power BJT with 4 terminals, operating in the very high frequency band up to 245 MHz. It features a max power dissipation of 340 W and can handle a collector current of up to 12 A. Ideal for amplifier applications, this transistor has a collector-emitter voltage of 55 V and operates at temperatures up to 200°C.
2SC2782 by Asi Semiconductor

2SC2782

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; Terminal Position: UNSPECIFIED;
2N3866A by Microchip Technology

2N3866A

Microchip Technology

2N3866A by Microchip Technology is an NPN RF BJT with a VCEsat of 1V, Gp of 10dB, and hFE of 25. It is used as an amplifier in the UHF band due to its high fT of 800MHz. The transistor has a max VCE of 30V and IC of 0.4A, making it suitable for high-frequency applications.
2SC3952D by Onsemi

2SC3952D

Onsemi

Onsemi's 2SC3952D is an NPN RF Power BJT with a max VCE of 70V and IC of 0.5A. Ideal for switching applications, it has fT of 700MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for flange mount style.
LLE15180X by NXP Semiconductors

LLE15180X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 22 V;
LTE42008RTRAY by NXP Semiconductors

LTE42008RTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Highest Frequency Band: C BAND; Transistor Element Material: SILICON;
SD1731-14 by STMicroelectronics

SD1731-14

STMicroelectronics

SD1731-14 by STMicroelectronics is a NPN RF BJT with 257W power dissipation, 55V max collector-emitter voltage, and 20A max collector current. It is used in high-frequency band applications due to its single configuration and silicon transistor element material.