STMicroelectronics - SEF542

  1. Home
  2. STMicroelectronics - SEF542
SEF542 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number SEF542
Description Other Transistors;
Datasheet SEF542 Datasheet
In Stock4,598
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,598 - -

Popular Products

Category Top Products

BD140 by Texas Instruments

BD140

Texas Instruments

The Texas Instruments BD140 is a PNP transistor with max power dissipation of 8W, hFE of 40, and IC of 1.5A. Ideal for applications requiring high current amplification such as audio amplifiers and power supplies due to its single configuration and high operating temperature of 150°C.
MPSA92 by Sinyork

MPSA92

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BC817-25 by Sprague Electric

BC817-25

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
IRF640 by Jiangsu Changjiang Electronics Technology

IRF640

Jiangsu Changjiang Electronics Technology

Other Transistors;
BD140 by Inchange Semiconductor

BD140

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N3904 by Itt Components

2N3904

Itt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
SI4532DY by Vishay Intertechnology

SI4532DY

Vishay Intertechnology

SI4532DY by Vishay Intertechnology is a N-CHANNEL AND P-CHANNEL transistor with a max drain current of 3.9A and max power dissipation of 2W. It is a surface mount device suitable for applications requiring metal-oxide semiconductor technology, such as temperature-sensitive systems operating up to 150°C.
BC817-25 by Jiangsu Changjiang Electronics Technology

BC817-25

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 160;
TIP125 by Philips Semiconductors

TIP125

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP112 by Unisonic Technologies

TIP112

Unisonic Technologies

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
BCP56-16 by Philips Semiconductors

BCP56-16

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;
BC807-40 by Weitron Technology

BC807-40

Weitron Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC856B by Jiangsu Changjiang Electronics Technology

BC856B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP112 by Asi Semiconductor

TIP112

Asi Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
2010 by Asi Semiconductor

2010

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 2.5 A; No. of Elements: 1;
TIP50 by Harris Semiconductor

TIP50

Harris Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BD679A by Inchange Semiconductor

BD679A

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
BC548 by Shanghai Lunsure Electronic Technology

BC548

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP125 by Comset Semiconductors

TIP125

Comset Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP125 by Boca Semiconductor

TIP125

Boca Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;