STMicroelectronics - SGS100MA010D1

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SGS100MA010D1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number SGS100MA010D1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;
Datasheet SGS100MA010D1 Datasheet
In Stock1,583
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 400 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 2
Maximum Power Dissipation (Abs): 400 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .014 ohm
JEDEC-95 Code: TO-240
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: FAST SWITCHING
Maximum Drain Current (Abs) (ID): 120 A
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