STMicroelectronics - SGS35DB080D

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;

NPN; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; Terminal Finish: TIN LEAD; Maximum Collector-Emitter Voltage: 60 V;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 100 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;

TIP120TU by Onsemi is a NPN power BJT with 65W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is designed for high-power tasks in various electronic circuits.

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 60 V;

BD1396STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;

Secos TIP31-C is a NPN BJT transistor with max VCEsat of 1.2V, ideal for switching applications. It has a max power dissipation of 40W and max collector-emitter voltage of 100V. With hFE of 10, it operates b/w -65 to 150°C, suitable for high-power circuits in various electronic devices.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

TIP115G by Onsemi is a PNP power BJT with 50W max power dissipation, hFE of 500, and 60V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Terminal Position: SINGLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: SWITCHING;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.15 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; Maximum Operating Temperature: 175 Cel;