STMicroelectronics - SGS35DB080D

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SGS35DB080D by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number SGS35DB080D
Description Power Bipolar Transistors; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 35 A; Minimum DC Current Gain (hFE): 10; Maximum VCEsat: 3 V; No. of Elements: 1;
Datasheet SGS35DB080D Datasheet
In Stock1,434
NAME DESCRIPTION
Maximum Collector Current (IC): 35 A
Maximum Power Dissipation (Abs): 375 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: BIP General Purpose Power
Minimum DC Current Gain (hFE): 10
Maximum VCEsat: 3 V
Maximum Fall Time (tf): 1500 ns
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