STMicroelectronics - SGS50DB040D

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SGS50DB040D by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number SGS50DB040D
Description Power Bipolar Transistors; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 50 A; Minimum DC Current Gain (hFE): 10; Maximum VCEsat: 3 V; Maximum Fall Time (tf): 700 ns;
Datasheet SGS50DB040D Datasheet
In Stock1,249
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 375 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: BIP General Purpose Power
Minimum DC Current Gain (hFE): 10
Maximum VCEsat: 3 V
Maximum Fall Time (tf): 700 ns
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