SGSD100 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	SGSD100
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Maximum Power Dissipation Ambient: 130 W; No. of Terminals: 3;
Datasheet	SGSD100 Datasheet
In Stock	1,145

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	25 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	130 W
Other Names:	SGSD100-ND 497-6727-5
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	300
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Maximum VCEsat:	3.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,145	-	-

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