STMicroelectronics - SGSP148

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SGSP148 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number SGSP148
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; Maximum Pulsed Drain Current (IDM): 2 A; Operating Mode: ENHANCEMENT MODE;
Datasheet SGSP148 Datasheet
In Stock1,984
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .5 A
Maximum Pulsed Drain Current (IDM): 2 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 15 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 30 ohm
Maximum Feedback Capacitance (Crss): 13 pF
JEDEC-95 Code: TO-39
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 550 V
Maximum Drain Current (Abs) (ID): .5 A
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