SM30T6.8CAY by STMicroelectronics | Diodes

Image shown is a representation only.

Manufacturer	STMicroelectronics
Manufacturer's Part Number	SM30T6.8CAY
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	SM30T6.8CAY Datasheet
In Stock	1,837

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Breakdown Voltage:	7.1 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Repetitive Peak Reverse Voltage:	5 V
JEDEC-95 Code:	DO-214AB
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
Diode Element Material:	SILICON
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	3000 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-C2
Minimum Breakdown Voltage:	6.45 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	175 Cel
Reference Standard:	AEC-Q101; IEC-61000-4-2
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,837	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;